OPENING SESSION
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Chairman; W. H. Brattain
Co-chairman: Y. Uchida |
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Opening Address
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| T. Muto | i |
Opening Lecture
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| Quantum Transport in High Magnetic Fields | |
| C. Herring | v |
I. BAND THEORY
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Chairman: M. Lax
Co-chairman: A. Morita |
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| I-1. Electronic Structure of Covalent Crystals | |
| J. C. Phillips | 3 |
| I-2. New Studies of the Band Structure of the Diamond-Type Crystals | |
| F. Herman, R. L. Kortum, C. D. Kuglin and R. A. Short | 7 |
| I-3. Energy Band Structure of CdS Using Self-Consistent OPW and Pseudopotential Methods | |
| T. C. Collins, R. N. Euwema and J. S. DeWitt | 15 |
| I-4. Band Structure of GaAs, GaP,InP and AlSb: the k・p Method | |
| F. H. Pollak, C. W. Higginbotham and M. Cardona | 20 |
| I-5. Band Structure of the Semiconducting Layer Compounds | |
| H. Kamimura and K. Nakao | 27 |
| I-6. Experimental Evidence Concerning the Conduction Band of SrTiO3 | |
| H. P. R. Frederikse, W. R. Hosler and W. R. Thurber | 32 |
| I-7. Structure Due to Transport Effects in Photoelectric Energy Distributions | |
| E. O. Kane | 37 |
| I-8. Photoemission Studies on Strontium Titanate | |
| R. H. Tredgold and R. H. Williams | 46 |
II. OPTICAL PROPERTIES -LATTICE-
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Chairman: M. Balkanski
Co-chairman: H. Yoshinaga |
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| II-1. The Phenomenological Interpretation of the Two Phonon Raman Scattering and Infrared Absorption Spectra | |
| F. A. Johnson and C. T. Sennett | 53 |
| II-2. Far Infrared Lattice Bands in Indium Antimonide | |
| D. L. Stierwalt | 58 |
| II-3. Optically-Active Multiphonon Processes in II-VI Semiconductors | |
| S. S. Mitra | 61 |
| II-4. Localized Modes of Substitutional Impurities in Intermetallic Compounds | |
| S. D. Smith, R. E. V. Chaddock and A. R. Goodwin | 67 |
| II-5. Infrared Absorption of Localized Vibration Due to Lithium in Zinc Selenide and Cadmium Sulfide | |
| A. Mitsuishi, A. Manabe, H. Yoshinaga, S. Ibuki and H. Komiya | 72 |
III. OPTICAL PROPERTIES -ELECTRONIC-
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Chairman: E. Burstein
Co-chairman: G. Kuwabara |
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| III-1. Aspects of Polaritons | |
| J. J. Hopfield | 77 |
| III-2. Electroreflectance in Semiconductors | |
| M. Cardona, F. H. Pollak and K. L. Shaklee | 89 |
| III-3. A Theoretical and Experimental Study of Optical Transition in Semiconductors Induced by Carrier Interaction | |
| A. A. Grinberg, N. I. Kramer, A. A. Rogacbev and S. M. Ryvkin | 95 |
| III-4. Interband Piezo-Absorption in GaP | |
| I. Balslev | 101 |
| III-5. Optical Properties of Germanium in the Spectral Region 1.7 eV to 2.1 eV | |
| R. F. Potter | 107 |
| III-6. Oscillatory Electro-Absorption Effects Near the Direct Edge of Germanium | |
| Y. Hamakawa, F. Germano and P. Handler | 111 |
| III-7. The Anomalous Temperature Dependence of Infrared Absorption in p-Type Germanium | |
| A. C. Baynham and E. G. S. Paige | 118 |
| III-8. Optical Properties and Electronic Structure of Amorphous Germanium | |
| J. Tauc, R. Grigorovici and A. Vancu | 123 |
| III-9. Optical Properties and Energy Band Structure of ZnS-CdS Single Crystals | |
| M. S. Brodin, M. V. Kurik and N. I. Vitrikhovskii | 127 |
IV. EXCITON
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Chairman: J. C. Phillips
Co-chairman: H. Hasegawa |
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| IV-1. Coexistence of Local and Band Structures in the Absorption Spectra of Solids | |
| Y. Toyozawa, M. Inoue, T. Inui, M. Okazaki and E. Hanamura | 133 |
| IV-2. A Mechanism for Energy Transport by Excitons | |
| D. Redfield | 139 |
| IV-3. Sharp Line Emission Due to Preferential Pairing in ZnO Crystals | |
| D. C. Reynolds, C. W. Litton, Y. S. Park and T. C. Collins | 143 |
| IV-4. The Exciton and Magneto-Oscillatory Absorption of Cu2O | |
| G. Kuwabara, A. Misu and H. Sasaki | 148 |
| IV-5. Metastable Excitons in CdI2 and PbI2 | |
| D. L. Greenaway and G. Harbeke | 151 |
| IV-6. Optical Absorption, Photoconductivity, Spontaneous and Stimulated Light Emission Involving Exciton States in CdTe | |
| V. S. Vavilov, S. N. Maximovsky, S. A. Medvedev, E. L. Nolle, A. F. Plotnikov and A. A. Sokolova | 156 |
V. MAGNETO-OPTICS
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Chairman: E. W. J. Mitchell
Co-chairman: Y. Toyozawa |
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| V-1. Magneto-Optical Phenomena | |
| B. Lax | 165 |
| V-2. Magneto-Optical Studies of Exciton Effects in Layer-Type Semiconductors | |
| K. Aoyagi, A. Misu, G. Kuwabara, Y. Nishina, S. Kurita, T. Fukuroi, O. Akimoto, H. Hasegawa, M. Shinada and S. Sugano | 174 |
| V-3. Oscillatory Magneto-Absorption of the Direct Transition in the Layer Compound Gallium Selenide at 1.5°K | |
| J. Halpern | 180 |
| V-4. Magneto-Piezo-Optical Experiments in Semiconductors | |
| J. G. Mavroides, M. S. Dresselhaus, R. L. Aggarwal and G. F. Dresselhaus | 184 |
| V-5. High Field Magneto-Optical Studies of Cd3As2 | |
| E. D. Haidemenakis, M. Balkanski, E. D. Palik and J. Tavernier | 189 |
| V-6. Oscillatory Magneto-Absorption in Tellurium | |
| C. Rigaux and G. Drilhon | 193 |
| V-7. The Effects of Band-Population on Interband Magneto-Optical Phenomena | |
| D. L. Mitchell, E. D. Palik and R. F. Wallis | 197 |
| V-8. Cyclotron Resonance in Tellurium at Submillimeter Wavelengths | |
| J. C. Picard and D. L. Carter | 202 |
| V-9. Electron Effective Mass in Gallium Arsenide as a Function of Doping | |
| H. Piller | 206 |
VI. IMPURITY STATE
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Chairman: H. Y. Fan
Co-chairman: Y. Uemura |
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| VI-1. Electron Spin Resonance of Impurities in Semiconductors | |
| J. M. Winter | 213 |
| VI-2. Impurity Band Tails in Degenerate Semiconductors | |
| M. Lax and B. I. Halperin | 218 |
| VI-3. A Piezo-Spectroscopic Determination of the Symmetries of Acceptor States in Silicon and Germanium | |
| P. Fisher, R. L. Jones, A. Onton and A. K. Ramdas | 224 |
| VI-4. Sulfur Donors in Silicon: Infrared Transitions and Effects of Calibrated Uniaxial Stress | |
| W. E. Krag, W. H. Kleiner, H. J. Zeiger and S. Fischler | 230 |
| VI-5. Chemical Shifts on Shallow Donor Levels in Silicon | |
| A. Morita and H. Nara | 234 |
| VI-6. The Application of Crystal Field Theory to the Electrical Properties of Co Impurities in GaP | |
| D. H. Loescher, J. W. Allen and G. L. Pearson | 239 |
| VI-7. Zeeman Effect of Acceptor States in Semiconducting Diamond | |
| D. M. S. Bagguley, S. D. Smith, C. J. Summers and G. Vella-Coleiro | 244 |
| VI-8. Magneto-Optical Study of Hydrogenic Donor Impurity States in InSb | |
| R. Kaplan | 249 |
| VI-9. Analysis of Zero-Phonon-Lines in Absorption and Emission of Copper Impurities in ZnS Crystals | |
| I. Broser and H. Maier | 254 |
| VI-10. Investigation of the Nature of Impurity States in CdTe | |
| N. B. Urli | 259 |
VII. RECOMBINATION
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Chairman: V. S. Vavilov
Co-chairman: S. Tanuma |
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| VII-1. A Review of Radiative Recombination at Isoelectronic Donors and Acceptors | |
| D. G. Thomas | 265 |
| VII-2. Semiconductor Lasers Using Optical Pumping | |
| N. G. Basov, A. Z. Grasiuk, V. F. Efimkov, I. G. Zubarev, V. A. Katulin and Ju'. M. Popov | 277 |
| VII-3. Recombination Processes in GaP Diodes as Functions of Temperature | |
| M. R. Lorenz, T. N. Morgan, M. H. Pilkuhn and G. D. Pettit | 283 |
| VII-4. Piezoemission of Indium Antimonide | |
| C. Benoit à la Guillaume and P. Lavallard | 288 |
| VII-5. Edge Absorption and Photoluminescence in Disordered Gallium Arsenide | |
| E. W. J. Mitchell and C. Norris | 292 |
| VII-6. Cathodoluminescence of p-Type GaAs | |
| J. I. Pankove | 298 |
| VII-7. On the Mechanism of Recombination Radiation of p-n Junctions in GaAs | |
| D. N. Nasledov and B. V. Tsarenkov | 302 |
| VII-8. Radiation Ionization Energies in Semiconductors: Speculations about the Role of Plasmons | |
| C. A. Klein | 307 |
| VII-9. Surface Recombination Velocities and Diffusion Lengths in GaAs | |
| D. B. Wittry and D. F. Kyser | 312 |
VIII. TRANSPORT PHENOMENA
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Chairman: H. Weiss
Co-chairman: H. Miyazawa |
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| VIII-1. Scattering of Spin Polarized Carriers from Spin Polarized Impurities in Semiconductors | |
| A. Honig and R. Maxwell | 319 |
| VIII-2. Effect of Carrier-Carrier Scattering on the Hall Effect in Graphite | |
| K. Sugihara | 324 |
| VIII-3. Cyclotron Resonance Study of Electron Scattering by Neutralized Acceptors in Si and Ge | |
| E. Otsuka, K. Murase and T. Ohyama | 327 |
| VIII-4. Oscillatory Magneto-Conductance in Si Surfaces | |
| A. B. Fowler, F. F. Fang, W. E. Howard and P. J. Stiles | 331 |
| VIII-5. Galvanomagnetic Properties of Surface Layers in Indium Arsenide | |
| S. Kawaji and Y. Kawaguchi | 336 |
| VIII-6. Galvanomagnetic Effects and Band Structure of CdSb | |
| T. Kawasaki | 341 |
| VIII-7. The Structure of the Conduction Band and the Anisotropy of the Electron Scattering in n-GaAs | |
| A. F. Kravchenko, W. S. Sardarjan and W. W. Efimov | 346 |
| VIII-8. Size Effects in Conductivity of Semiconductors with a Few Types of Carriers | |
| É. I. Rashba, I. I. Boiko, V. A. Cochelap, Z. S. Gribnikov, V. A. Romanov and I. P. Zhad'ko | 351 |
IX. QUANTUM TRANSPORT
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Chairman: C. Herring
Co-chairman: H. Kawamura |
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| IX-1. Cyclotron Resonance Line Width of Germanium and Silicon in the Quantum Limit | |
| R. Ito, M. Fukai and I. Imai | 357 |
| IX-2. Magnetoresistance Oscillations Due to Inelastic Scattering of Electrons on Optical Phonons | |
| I. M. Tsidilkovski and M. M. Akselrod | 362 |
| IX-3. Low Temperature Transport Effects in n-Type GaSb at High Magnetic Fields | |
| W. M. Becker and T. O. Yep | 366 |
| IX-4. Shubnikov-de Haas Effect and Electron Band Structure of Cadmium Arsenide | |
| I. Rosenman | 370 |
| IX-5. Magnetoresistance Studies of HgTe at Low Temperatures | |
| R. A. Stradling and G. A. Antcliffe | 374 |
| IX-6. Shubnikov-de Haas Effect in Tellurium | |
| E. Braun and G. Landwehr | 380 |
| IX-7. The Fermi Surface of Tin Telluride: Shubnikov-de Haas Effect | |
| J. R. Burke, Jr., B. Houston, H. T. Savage, J. Babiskin and P. G. Siebenmann | 384 |
| IX-8. Quantum Effects on Capacitance of p-n Junctions | |
| J. C. Thuillier and J. M. Thuillier | 391 |
X. HOT ELECTRONS
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Chairman: G. L. Pearson
Co-chairman: J. Yamashita |
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| X-1. Some Aspects of Non-Ohmic Conduction | |
| E. G. S. Paige | 397 |
| X-2. Non-Ohmic Behaviour and Oscillation Phenomena in ZnO Single Crystals | |
| N. I. Meyer, M. H. Jørgensen and E. Mosekilde | 406 |
| X-3. Non-Linear Galvanomagnetic Effects Due to Hot Electrons in n-Type InSb in the Quantum Limit | |
| N. Kotera, K. F. Komatsubara and E. Yamada | 411 |
| X-4. Energy Relaxation and Intervalley Relaxation of Hot Electrons in n-Type Germanium | |
| K. Seeger and D. Schweitzer | 415 |
| X-5. Hot Carriers and the Path Variable Method | |
| H. F. Budd | 420 |
| X-6. Monte Carlo Calculation of Hot Electron Problems | |
| T. Kurosawa | 424 |
| X-7. High Field Mobility of Photoelectrons in CdS | |
| M. Onuki and K. Shiga | 427 |
| X-8. Energy Losses by Hot Electrons in Solids: A Semiclassical Approach | |
| A. Rose | 431 |
| X-9. Avalanche Multiplication in Ge and GaAs p-n Junctions | |
| R. A. Logan and S. M. Sze | 434 |
| X-10. High Field Effects in n-Type InSb | |
| J. C. McGroddy and M. I. Nathan | 437 |
XI. ELECTRON-PHONON INTERACTION
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Chairman: V. L. Bonch-Bruevich
Co-chairman: T. Kasuya |
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| XI-1. Polaron Induced Anomalies in InSb | |
| D. M. Larsen and E. J. Johnson | 443 |
| XI-2. On Amplification of Hypersound and Space Charge Waves in Semiconductors | |
| S. I. Pekar | 448 |
| XI-3. Theory of Sound Amplification in Many-Valley Semiconductors | |
| S. V. Gantsevich and V. L. Gurevich | 453 |
| XI-4. Electron-Phonon Interaction in Strong Electric Fields | |
| J. Yamashita and K. Nakamura | 455 |
| XI-5. A Nonlinear Theory of Electron-Phonon Interaction in Semiconductors | |
| N. Mikoshiba | 460 |
| XI-6. Transmission of Microwave Radiation through "Acousto-Electrically Amplifying" CdS | |
| G. S. Hobson and E. G. S. Paige | 464 |
| XI-7. Current Saturation and Instabilities in CdS Crystals | |
| A. Ishida, C. Hamaguchi and Y. Inuishi | 469 |
| XI-8. Acoustoelectric Effect in Semiconducting CdS | |
| A. Many and I. Balberg | 474 |
| XI-9. Behavior of Phonons in Cadmium Sulfide | |
| E. Maruyama and Y. Murayama | 479 |
| XI-10. Acoustoelectric Domain Effects in III-V Semiconductors | |
| R. Bray, C. S. Kumar, J. B. Ross and P. O. Sliva | 483 |
| XI-11. Ultrasonic Amplification and Non-Ohmic Behavior in Tellurium | |
| T. Ishiguro and T. Tanaka | 489 |
| XI-12. Acoustoelectric Phenomena in Tellurium | |
| G. Quentin and J. M. Thuillier | 493 |
| XI-13. Build-up of Phonons in Germanium | |
| T. Arizumi, M. Umeno and S. Iwai | 498 |
XII. CURRENT INSTABILITY
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Chairman: W. C. Dunlap
Co-chairman: Y. Inuishi |
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| XII-1. Electronic Transport Properties Relevant to Instabilities in GaAs | |
| J. B. Gunn | 505 |
| XII-2. On the Theory of Electrical Domains in Hot Electron Semiconductors | |
| V. L. Bonch-Bruevich | 509 |
| XII-3. Mechanism of the Gunn Effect | |
| A. G. Chynoweth, W. L. Feldmann and D. E. McCumber | 514 |
| XII-4. Numerical Studies of a Two-Valley Model of the Gunn Effect | |
| D. E. McCumber | 522 |
| XII-5. Intervalley Scattering Rate and High-Field Electron Distributions in GaAs | |
| E. M. Conwell and M. O. Vassell | 527 |
| XII-6. Mixed Scattering in III-V Compounds | |
| C. Hilsum and J. Welborn | 532 |
| XII-7. Electrical Instability in Germanium Due to Hot Electron Recombination on Repulsive Centers | |
| M. S. Kagan and S. G. Kalasbnikov | 537 |
XIII. IMPURITY CONDUCTION
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Chairman: J. Tauc
Co-chairman: M. Shibuya |
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| XIII-1. Negative Magnetoresistance in the Metallic Impurity Conduction | |
| W. Sasaki | 543 |
| XIII-2. An Experimental Investigation of the Hall Effect in the Hopping Region | |
| M. Amitay and M. Pollak | 549 |
| XIII-3. Magnetoresistance of Heavily Doped n-Type Silicon | |
| M. Balkanski and A. Geismar | 554 |
| XIII-4. Transport Properties and Localized Spins in n-Type InSb | |
| R. P. Khosla and R. J. Sladek | 557 |
| XIII-5. Annealing of Neutron-Irradiation-Induced Changes in Impurity Conduction in Antimony-Doped Germanium | |
| E. L. Wolf and W. D. Compton | 561 |
| XIII-6. Excitation and Relaxation of Ionized Impurity Pairs in Silicon | |
| S. Tanaka, M. Kobayashi, K. Uchinokura and A. Koma | 566 |
| XIII-7. Electric Field Effect on the Spin-Lattice Relaxation of Donor Electrons in Silicon | |
| K. Morigaki and J. M. Winter | 570 |
| XIII-8. Electron Spin Resonance of Phosphorus Doped Silicon in the Metallic Conduction Region | |
| S. Maekawa | 574 |
| XIII-9. Effect of Doping on the Electron Spin Resonance in Phosphorus Doped Silicon | |
| H. Kodera | 578 |
| XIII-10. Far Infrared Resonant Absorption in n-Type Silicon | |
| L. J. Neuringer, R. C. Milward and R. L. Aggarwal | 582 |
XIV. TUNNELING
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Chairman: W. H. Brattain
Co-chairman: E. Hirahara |
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| XIV-1. Tunneling Studies on the Group V Semimetals and the IV-VI Semiconductors | |
| L. Esaki | 589 |
| XIV-2. Contact Effects in the Degenerate Semiconductors at Low Temperature | |
| B. M. Vul, E. I. Zavaritskaya and N. V. Zavaritsky | 598 |
| XIV-3. Reverse Characteristics of GaSb Tunnel Diodes | |
| R. P. Nanavati and M. Eisencraft | 603 |
| XIV-4. Optical Absorption, Tunnel Current and Diagonal Tunneling in Crossed Electric and Magnetic Fields | |
| A. G. Aronov and G. E. Pikus | 608 |
XV. MAGNETIC SEMICONDUCTORS
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Chairman: W. Paul
Co-chairman: W. Sasaki |
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| XV-1. Magnetic Field Effects on Resistivity and Thermoelectric Power of Single Crystal MnP | |
| T. Suzuki, Y. Matsumura and E. Hirahara | 615 |
| XV-2. Magnetic Resonance Experiments on VO2 | |
| J. Umeda, H. Kusumoto and K. Narita | 619 |
| XV-3. Optical Properties of α-MnS in the Fundamental Absorption Region | |
| D. R. Huffman, R. L. Wild and J. Callaway | 623 |
| XV-4. Magnetic Interactions between Mn Spins Diluted in GeTe | |
| M. Rodot, J. Cohen, J. Lewis, P. Mollard, H. Rodot and G. Villers | 627 |
XVI. SUPERCONDUCTIVITY
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Chairman: F. Herman
Co-chairman: W. Sasaki |
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| XVI-1. Superconductivity in Degenerate Semiconductors | |
| M. L. Cohen and C. S. Koonce | 633 |
| XVI-2. Superconductivity in Semiconducting SrTiO3 | |
| J. F. Schooley and W. R. Thurber | 639 |
| XVI-3. Superconducting Properties of Germanium Telluride | |
| R. A. Hein, J. W. Gibson, R. L. Falge, Jr., R. Mazelsky, R. C. Miller and J. K. Hulm | 643 |
XVII. SEMIMETALS
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Chairman: D. Polder
Co-chairman: T. Okada |
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| XVII-1. Analysis of dc Transport Phenomena in Bismuth | |
| G. E. Smith and R. Wolfe | 651 |
| XVII-2. Cyclotron Resonance in Arsenic | |
| W. R. Datars and J. Vanderkooy | 657 |
| XVII-3. Experimental Determination of Fermi Surface in Pure and Doped Arsenic through de Haas-van Alphen Effect | |
| S. Tanuma, Y. Ishizawa and S. Ishiguro | 662 |
| XVII-4. Shubnikov-de Haas Investigations of the Bi1-xSbx (0<x<0.3) System | |
| M. R. Ellett, R. B. Horst, L. R. Williams and K. F. Cuff | 666 |
| XVII-5. Galvanomagnetic Studies of Sn-Doped Bi | |
| R. T. Bate and N. G. Einspruch | 673 |
| XVII-6. Electron Transport Phenomena in Thin Films of Bismuth | |
| Y. H. Kao | 678 |
XVIII. PLASMA INSTABILITY
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Chairman: A. L. McWhorter
Co-chairman: J. Yamaguchi |
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| XVIII-1. Instabilities in Solid State Plasmas | |
| J. Bok | 685 |
| XVIII-2. Avalanche Plasma Production and Instabilities on Subnanosecond Time Scales | |
| B. Ancker-Johnson | 694 |
| XVIII-3. Instability of Electron-Hole Plasma in Semiconductor, Caused by Non-Linearity of Voltage-Current Characteristics | |
| M. I. Iglisin, E. G. Pel, L. Ya. Pervova and V. I. Fistul | 700 |
| XVIII-4. Magnetic Field Effects on the Static Shielding of an Impurity Charge by an Electron Plasma | |
| N. J. Horing | 704 |
XIX. MAGNETO-PLASMA AND MAGNETO-ACOUSTIC PHENOMENA
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Chairman: B. Lax
Co-chairman: Y. Kanai |
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| XIX-1. Observation of Quantum, Spin and High Field Damping Effects in Microwave Helicon Propagation in Degenerate Semiconductor Plasmas | |
| J. K. Furdyna | 713 |
| XIX-2. Helicon Effect in InSb and HgTe by a Resonant-Cavity Method | |
| J. P. Jamet, B. Lemaire, V. Cagan and C. Verié | 718 |
| XIX-3. Helicon-Phonon Interaction in a Multi-Valley Semiconductor | |
| P. R. Antoniewicz and S. Rodriguez | 723 |
| XIX-4. Large Quantum Oscillations Associated with Helicon Waves in Bi-Te Dilute Alloys | |
| T. Yamada | 726 |
| XIX-5. Microwave Phase Shift Due to a Magneto-Plasma Resonance | |
| R. Hirota and K. Suzuki | 730 |
| XIX-6. Determination of Fermi Velocity and Effective Mass from Cyclotron Damping of Magneto-Plasma Waves in Bismuth | |
| H. Kawamura, S. Nagata, S. Takano and J. Nakahara | 734 |
| XIX-7. The Possibility of the Coupling of Magneto-Plasma Waves with Optical Phonons in Polar Semiconductors | |
| I. Yokota | 738 |
| XIX-8. Transmission Studies of Plasma-Resonance and Plasma-Cyclotron Resonance in Thin Film Polar Semiconductors | |
| S. Iwasa, Y. Sawada, E. Burstein and E. D. Palik | 742 |
| XIX-9. Giant Oscillations in the Magneto-Acoustic Attenuation of Bismuth | |
| S. Mase, Y. Fujimori and H. Mori | 746 |
| XIX-10. Magneto-Acoustic Resonances in Antimony | |
| T. Fukase and T. Fukuroi | 751 |
| XIX-11. Magneto-Acoustic Effects in n-InSb at 9GHz | |
| K. W. Nill and A. L. McWhorter | 755 |
| XIX-12. Determination of the Energy Band Parameters of Bismuth by Giant Quantum Attenuation of Sound Waves | |
| Y. Sawada, E. Burstein and L. Testardi | 760 |
CLOSING SESSION
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| Chairman; T. Muto |
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Closing Addresses
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| |
| E. Burstein | 767 |
| |
| D. Polder | 770 |
| |
| H. Y. Fan | 773 |
| Author Index | 777 |
